Articole din publicaţii naţionale: Recent submissions

  • Interband optical transitions in the region of exciton resonances in In0.3Ga0.7As/GaAs quantum wells 
    SYRBU, N.; DOROGAN, A.; DOROGAN, V.; VIERU, T.; URSAKI, V.; ZALAMAI, V. (Academy of Sciences of Moldova, 2012)
    Reflectance spectra of quantum wells (QWs) with 8-nm-thick In0.3Ga0.7As layers with a 9-nm-thick GaAs barrier layer up and a 100-nm-thick barrier layer down were investigated in the spectral range of 0.5–1.6 eV in S- and ...
  • Dynamics of blue-violet InGaN lasers with different saturable absorber designs 
    TRONCIU, V. Z. (Academy of Sciences of Moldova, 2006)
    A review is presented of a range of investigations of the CW, self-pulsating and excitable behaviour of blue-violet InGaN lasers with different designs of saturable absorber. Bifurcations have been identified that are ...
  • Structural-information parameters of dissipative structures on DILIS-M system surface 
    CONSTANTINOV, B. (Academy of Sciences of Moldova, 2006)
    In the present paper there are considered problems concerning analysis of stability of dissipative structures with viscous friction, i.e. dielectric liquid metal electrode (DILIS-M). Theory of kinetic energy changes ...
  • Gas sensing characterization of tellurium thin films by the Kelvin probe technique 
    TSIULYANU, D.; MARIAN, S.; MOCREAC, O. (Academy of Sciences of Moldova, 2012)
    The sensing behavior of tellurium films at room temperature was tested with environmental pollutant gases, such as NO2, CO, O3, and water vapor, using the Kelvin probe technique. A significant sensitivity was observed for ...
  • Intense luminescence from porous ZnSe layers 
    MONAICO, Ed.; UBRIETA, A.; FERNANDEZ, P.; PIQUERAS, J.; TIGINYANU, I.M.; URSAKI, V. V.; BOYD, R. W. (Academy of Sciences of Moldova, 2007)
    We report on the possibility to prepare ZnSe porous layers with different degrees of porosity by means of electrochemical methods. The prepared porous structures were characterized using scanning electron microscopy ...
  • Semiconductor-oxide nanocomposites based on porous semiconductors 
    SIRBU, L.; URSAKI, V. V.; TIGINYANU, I. M.; DOLGALEVA, Ks.; BOYD, R. W. (Academy of Sciences of Moldova, 2007)
    Rare-earth containing oxide nanocomposites are prepared of porous GaP and GaAs templates in a controlled fashion. The initial porous GaP and GaAs networks are replaced by GaPO4 and Ga2O3 structures, respectively, during ...
  • Free and bound exciton luminescence of ZnP2 –D48 
    SYRBU, N. N.; STAMOV, I. G.; DOROGAN, A. V.; NEMERENCO, L. L. (Academy of Sciences of Moldova, 2007)
    Thin structure of polarized absorption spectra of indirect transitions with phonon emission in the ZnP2 crystals is investigated. In the luminescence spectra, radiation of phonons at annihilation of free excitons ...
  • Some features of absorption and photoluminescence of wulfenite (PbMoO4) crystals 
    MUSINSCHI, V.; MUSINSCHI, C. (Academy of Sciences of Moldova, 2012)
    A description of experimental results of studying the optical absorption and photoluminescence (PL) of tetragonal (class 4/m ) PbMoO4 crystals is given. The light absorption (λ ≈ 0.30.5 μm) shows that the edge absorption ...
  • Interference of resonance luminescence of exciton polaritons in CuGaS2 crystals 
    SYRBU, N. N.; NEMERENCO, L. L.; STAMOV, I. G.; BEJAN, V. N.; TEZLEVAN, V. E. (Academy of Sciences of Moldova, 2007)
    vol. 6 (2), pp. 194-200. ISSN 1810-648X. The nonmodulated and wavelength-modulated reflection spectra of CuGaS2 crystals for the polarization Е||c of 10 K are studied. The states n = 1, 2 and 3 of the excitons Γ4 ...
  • Superposition of free and bound exciton emission spectra in ZnP2-D48 
    STAMOV, I. G.; SYRBU, N. N.; URSAKI, V. V.; IVANENCO, Yu. (Academy of Sciences of Moldova, 2011)
    Bound exciton lines are found in the luminescence spectra of Mn, Sn, Cd, and Sb doped tetragonal zinc diphosphide crystals at the temperature of 10 K. Zero phonon lines of bound and free exciton emission, as well as their ...
  • Exciton spectra and energy band structure of CuAlSe2 crystals 
    SYRBU, N. N.; DOROGAN, A. V.; MASNIK, A.; URSAKI, V. V. (Academy of Sciences of Moldova, 2011)
    The main exciton parameters and the refined values of the energy intervals V1(Г7) - C1(Г6), V2(Г6) - C1(Г6) and V3(Г7) - C1(Г6) in CuAlSe2 crystals are discussed. The crystal field and spin-orbit splitting of the balance ...
  • Absorption and photoconductivity of PbMoO4 crystals 
    MUSINSCHI, V.; CARAMAN, M.; MUSINSCHI, C. (Academy of Sciences of Moldova, 2011)
    Spectral characteristics of the fundamental absorption coefficient and photoconductivity of PbMoO4 crystals with two polarizations in a temperature range of 77 to 300 K are investigated. The measurements of light transmitted ...
  • Specific features of radiative recombination spectra of ZnIn2S4 single crystals 
    ARAMA, E.; GHEORGHITA, E.; PINTEA, V.; ZHITAR, V. (Academy of Sciences of Moldova, 2013)
    Radiative recombination spectra of Mn-doped zinc tioindat single crystals have been analyzed in the work. The emission spectra interval close to its maximum (1.91 ± 0.2 eV) contains a number of special features which were ...
  • Numerical optimization of metallized titania nanotube morphologies for negative index material flat lens applications 
    SERGENTU, V.; ZALAMAI, V.; ENACHI, M.; URSAKI, V. V.; TIGINYANU, I. M. (Academy of Sciences of Moldova, 2010)
    We perform numerical calculation in order to optimize the morphology of metallized titania nanotubes from the point of view of flat lens application based on NIM. An efficient multiple-scattering approach is used to calculate ...
  • Calculation of optical functions of exciton and electron transitions by means of Kramers-Kronig relations in CuAlS2 crystals 
    STAMOV, I. G.; SYRBU, N. N.; KORZUN, B. V.; URSAKI, V. V.; DOROGAN, A. V.; MASNIK, A. (Academy of Sciences of Moldova, 2013)
    Excitonic reflection spectra of CuAlS2 crystals were measured at a temperature of 10 K for E||c and Ec polarizations. The shapes of the lines of ground states of Г4 and Г5 excitons were calculated by means of the ...
  • Nanostructured ZnO produced from ZnTe for random laser applications 
    ZALAMAI, V.; BURLACU, A.; POSTOLACHE, V.; RUSU, E. V.; URSAKI, V. V.; TIGINYANU, I. M. (Academy of Sciences of Moldova, 2010)
    We propose to produce ZnO nanostructured material by thermal treatment in oxygen ambient of bulk ZnTe crystals and nanowires obtained by electrochemical treatment. Bulk ZnTe crystals are transformed into granular ZnO media ...
  • Metrological simulators of electrical passive quantities with algorithmic structure 
    NASTAS, V. (Academy of Sciences of Moldova, 2010)
    This Review contains the systematization of the material in the domain of metrological simulators of electrical passive quantities with an algorithmic structure (MS-A, for simplicity), used as reference elements in impedance ...
  • Unele aspecte privind istoria MCHE din Republca Moldova 
    AMBROS, Tudor; URSATII, Nicolai (Institutul de Energetica al AŞM, 2015)
    În lucrare este descrisă reţeaua hidrografică din Republica Moldova şi unele aspecte istorice a utilizării microcentralelor hidroelectrice (MCHE) pe teritoriul ţării. Sunt prezentate machete de microhidrocentrale, care nu ...
  • Chaos communication using semiconductor lasers subject to different kinds of optical feedback 
    TRONCIU, V. Z. (Academy of Sciences of Moldova, 2010)
    In this review, we report the results of numerical investigations of the dynamical behavior of an integrated device composed by a semiconductor laser and different cavities that provide optical feedback. Due to the influence ...
  • Principiul de elaborare a protecţiei prin relee a liniilor electrice aeriene cu autocompensare la scurtcircuite nesimetrice dintre fazele apropiate 
    CHIORSAC, Mihail; TURCUMAN, Lilia; TURTURICA, Natalia (Institutul de Energetica al AŞM, 2015)
    Articolul este consacrat analizei principiilor de elaborare a protecţiei prin relee la scurtcircuite dintre fazele apropiate ale liniilor electrice aeriene (LEA) cu autocompensare în baza componentelor simetrice hexafazate. ...

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