Articole ştiinţifice: Recent submissions

  • Spatial dispersion effects in the exciton-polariton reflectivity spectra of CuGaS/sub 2/ crystals 
    SYRBU, N.; URSAKI, V.; NYARI, T.; BLAJE, M.; PRUNIC, P.; TEZLEVAN, V. (IEEE, 2000)
    The analysis of the exciton reflectivity contour in CuGaS/sub 2/ crystals at 8 K was carried out. Absorption and luminescence spectroscopy was employed for additional characterization. The value of the exciton Ridberg ...
  • Photoluminescence study of /spl alpha/-ZnAl/sub 2/S/sub 4/ single crystals 
    URSAKI, V.; BOLDURESCU, V.; BURLAKOV, I.; SYRBU, N.; NYARI, T. (IEEE, 2000)
    Photoluminescence (PL) spectra of ZnAl/sub 2/S/sub 4/ crystals with spinel structure were studied under the extrinsic excitation. The PL bands at 0.98 eV and 1.34 eV are suggested to be caused by native defects; while the ...
  • ZnO: Eu red phosphor grown from Na2B4O7 melt 
    RUSU, E. V.; TIGINYANU, I. M.; URSAKI, V. V.; STRATAN, G. I.; SYRBU, N. N.; ALBU, S. (Institutul de Inginerie Electronică şi Nanotehnologii "D. Ghiţu" al AŞM, 2007)
    A ZnO-based red phosphor was grown from a Na2B4O7 melt and the efficiency of Eu3+ ion excitation was demonstrated. The analysis of the emission related to the Eu3+ 4f-4f intrashell transitions suggests that the phosphor ...
  • Photoluminescence Study of Nitrogen-Related States in ZnSe 
    IVANOVA, Galina N.; NEDEOGLO, Dmitrii D.; NEDEOGLO, Natalia D.; RUSU, Emil V.; SIRKELI, Vadim P.; STRATAN, Gheorghe I.; URSAKI, Veacheslav V. (AIP Publishing LLC, 2007)
    Photoluminescence of N-doped ZnSe crystals is studied at temperatures between 10 and 300 K. Doping with N leads to the formation of simple N-based donor and acceptor defects, as well as associative N-based acceptors. The ...
  • Photoluminescence in CdGa2S4 single crystals 
    ZHITAR, V. F.; ARAMA, E. D.; URSAKI, V. V.; SHEMYAKOVA, T. D. (Institutul de Inginerie Electronică şi Nanotehnologii "D. Ghiţu" al AŞM, 2008)
    Long wavelength photoluminescence in CdGa2S4 single crystals was studied at 10 K. Novel bands were found out associated with donor-acceptor recombination. Interpretation was performed taking into account the data obtained earlier.
  • Preparation and characterization of GaP colloidal nanoparticles and films 
    IACOB, M.; RUSU, Emil; PYSHKIN, S.; URSAKI, V.; GUTSUL, T.; BALLATO, John (Society of Photo-Optical Instrumentation Engineers, SPIE, 2012)
    In this communication, we present results of investigations of the influence of technological conditions upon the properties of GaP nanoparticles produced by using a new precursor as a source of Ga atoms. The obtained ...
  • Preparation and characterization of Ga2O3 and GaN nanoparticles 
    RUSU, E.; URSAKI, V.; RAEVSCHI, S.; VLAZAN, P. (Society of Photo-Optical Instrumentation Engineers, SPIE, 2015)
    In this communication, we present results on preparation of GaN nanoparticles by conversion of Ga2O3 nanocrystals in a flow of NH3 and H2. The monoclinic Ga2O3 nanoparticles have been prepared by hydrothermal method with ...
  • Nanostructures Obtained Using Electric Discharges at Atmospheric Pressure 
    TOPALA, P.; OJEGOV, A.; URSAKI, V. (Springer Nature Switzerland, 2016)
    The results of theoretical and experimental investigations of physical phenomena that accompany the formation of oxide and hydroxide nano-metric pellicles on metal surfaces by applying pulsed electrical discharge machining ...
  • Vibrational properties of CdGa2S4 at high pressure 
    GALLEGO-PARRA, S.; GOMIS, O.; VILAPLANA, R.; ORTIZ, H. M.; PÉREZ-GONZÁLEZ, E.; LUNA, R.; RODRÍGUEZ-HERNÁNDEZ, P.; MUÑOZ, A.; URSAKI, V. V.; TIGINYANU, I. M.; MANJÓN, F. J. (AIP Publishing LLC, 2019)
    Raman scattering measurements have been performed in cadmium digallium sulphide (CdGa2S4) with defect chalcopyrite structure up to 25 GPa in order to study its pressure-induced phase transitions. These measurements have ...
  • Injection photodiodes based on metal oxide semiconductors 
    MORARI, Vadim; URSAKI, Veacheslav; RUSU, Emil; TIGINYANU, Ion (Institutul de Inginerie Electronică şi Nanotehnologii "D. Ghiţu" al AŞM, 2020)
    A brief review of our recent research on injection photodiodes based on metal oxide semiconductors deposited onto Si substrates is presented. A series of ZnSnO, NiO, and Zn1-xMgxO thin films are prepared by aerosol spray ...
  • Luminescence and Photoconductivity Caused by Antisite Defects in CdIn2S4 Single Crystals 
    GEORGOBIANI, A. N.; GRUZINTSEV, A. N.; RATSEEV, S. A.; TEZLEVAN, V. E.; TIGINYANU, I. M.; URSAKI, V. V. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 1986)
    Results of a study of the influence of nonstoichiometry as well as of annealing and argon ion implantation on photoluminescence and photoconductivity spectra of cadmium thioindate single crystals are presented. The energy ...
  • Non-Linear Raman Scattering in I-III2-VI4 Compounds 
    FOMIN, V. M.; TIGINYANU, I. M.; URSAKI, V. V. (IOP Publishing, 1993)
    The paper presents an experimental substantiation of the theory (based on the optical vibration anharmonism) of non-linear Raman scattering (RS) in defective II-III2-VI4 compounds. In the transparency region of those ...
  • Photoluminescence and conductivity compensation effects in fast-electron irradiated InP epilayers 
    RADAUTSAN, S. I.; TIGINYANU, I. M.; PYSHNAYA, N. B.; URSAKI, V. V. (Springer Nature Switzerland, 1994)
    Strong interaction between residual donor impurities and radiation defects was evidenced by studying the photoluminescence spectra of bound excitons in fast-electron (E=4 MeV) irradiated n-InP epilayers. A diminution of ...
  • Observation of 0.4 eV electron trap in electron-irradiated InP:Fe single crystals 
    TIGINYANU, I. M.; PYSHNAYA, N. B.; CALIN, M. V.; URSAKI, V. V. (IEEE, 1994)
    There has been increasing attention focused on the investigation of the /spl ap/0.4 eV electron trap in indium phosphide. According to G. Hirt et. al. (1993), the defect corresponding to that trap plays a major role in the ...
  • Raman scattering analysis of InGaAs/InP: effect of rare earth (dysprosium) addition during liquid phase epitaxial growth 
    TIGINYANU, I. M.; URSAKI, V. V.; PODOR, B.; CSONTOS, L.; SHONTYA, V. P. (IEEE, 1996)
    The authors present the results of Raman scattering investigation of the effect of the variation of the Dy doping level on the properties of InGaAs layers on InP, with the aim to elucidate the mechanisms of the effects of ...
  • Phase Transitions Induced by Hydrostatic Pressure in II-III2-VI4 Compounds 
    URSAKI, Veacheslav V.; BURLAKOV, Igor I.; TIGINYANU, Ivan M.; RAPTIS, Yannis S.; ANASTASSAKIS, Evangelos; ANEDDA, Alberto; CORPINO, Riccardo (IOP Publishing, 2000)
    II-III2-VI4 compounds with different crystal structures have been studied by Raman spectroscopy (RS) under hydrostatic pressure up to 30 GPa. The phase transition characteristics induced by hydrostatic pressure i.e. the ...
  • Design of titania nanotube structures by focused laser beam writing 
    ENACHI, Mihai; SARUA, Andrei; STEVENS-KALCEFF, Marion; TIGINYANU, Ion; GHIMPU, Lidia; URSAKI, Veaceslav (IEEE, 2013)
    Matrices of titania nanotubes (TiO 2 NTs) have been prepared by anodization of Ti foils in ethylene glycol based electrolyte. These matrices were subjected to annealing at various temperatures or exposed to a focused laser ...
  • A method of virtual image for determination of negative refraction index of a nanomedium 
    SERGENTU, V.; URSAKI, V. (Romanian Academy Publishing House, 2017)
    In this paper we propose a method for measuring the negative refraction index of films of optically transparent materials. The method is based on recording the direction of propagation and the shifting of the ray reflected ...
  • Morphology, optical and luminescence properties of ZnO layers doped with Al or Ag and co-doped with rare earth ions 
    ROGACHEV, Alexander; SEMCHEMKO, A.; GAISHUN, V.; RUSU, Emil; URSAKI, Veacheslav; CURMEI, Nicolai; ZALAMAI, Victor (Romanian Academy Publishing House, 2017)
    In this paper we propose a method for measuring the negative refraction index of films of optically transparent materials. Morphological, optical and luminescence properties of rare earth doped ZnO layers prepared by a ...
  • Scattering of a two-dimensional self-healing beam at the interface of a nanostructured medium with the vacuum 
    SERGENTU, Vladimir; URSAKI, Veacheslav (Romanian Academy Publishing House, 2018)
    In this paper the Fresnel’s formula are generalized to the case of a twodimensional (2D) self-healing beam incident on the interface of the vacuum with a nonmagnetic, homogeneous on average and isotropic nanostructured ...

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