Articole ştiinţifice: Recent submissions

  • Audio-Transducer for In-Ear-Applications based on CMOS-compatible electrostatic actuators 
    SPITZ, B.; WALL, F.; SCHENK, H.; MELNIKOV, A.; EHRIG, L.; LANGA, S.; STOLZ, M.; KAISER, B.; CONRAD, H.; SCHENK, H. (IEEE, 2019)
    Recently an innovative mSpeaker technology, based on a novel kind of CMOS compatible small gap electrostatic actuators for large deflection, has been introduced. In this paper, we devise methods to model such speakers in ...
  • A small-gap electrostatic micro-actuator for large deflections 
    CONRAD, Holger; SCHENK, Harald; KAISER, Bert; LANGA, Sergiu; GAUDET, Matthieu; SCHIMMANZ, Klaus; STOLZ, Michael; LENZ, Miriam (Springer Nature Limited, 2015)
    Common quasi-static electrostatic micro actuators have significant limitations in deflection due to electrode separation and unstable drive regions. State-of-the-art electrostatic actuators achieve maximum deflections of ...
  • A Novel Electrostatic Actuator Class 
    CONRAD, H.; KAISER, B.; GAUDET, M.; LANGA, S.; STOLZ, M.; UHLIG, S.; SCHIMMANZ, K.; SCHENK, H. (ELSEVIER, 2016)
    Common quasi-static electrostatic micro actuators have significant limitations in deflection due to electrode separation and unstable drive regions. These actuators suffer from an operational instability, the so-called ...
  • A contribution to the expansion of the applicability of electrostatic forces in micro transducers 
    SCHENK, Harald; CONRAD, Holger; GAUDET, Matthieu; UHLIG, Sebastian; KAISER, Bert; LANGA, Sergiu; STOLZ, Michael; SCHIMMANZ, Klaus (Society of Photo-Optical Instrumentation Engineers, SPIE, 2017)
    Electrostatic actuation is highly efficient at micro and nanoscale. However, large deflection in common electrostatically driven MEMS requires large electrode separation and thus high driving voltages. To offer a solution ...
  • Aspecte teoretice privind regimul juridic al sancţiunilor civile 
    BOSTAN, Ina; NICOLAEV, Elena (Ministerul Justiţiei al Republicii Moldova, 2016)
    The concept of civil sanction, which means basically an indispensable reference pillar for the functioning of any social construction, creates an image of a common natural characteristic that is a matter of course for any ...
  • Aspecte generale ale dezvoltării istorice a conceptului de vinovăţie în Rusia 
    URSU, Viorica (Ministerul Justiţiei al Republicii Moldova, 2016)
    The concept of guilt in Russia was developed under the influence of Western European medieval law, roman law, rules the Christian religion, which, in turn, were influenced by Jewish law. Initially the guilt was understood ...
  • Aspecte teoretice și practice privind utilizarea indicilor urbanistici la nivelul municipiului Chișinău 
    CLIMOVA, Alla; DOGOTARU, Svetlana (Ministerul Justiţiei al Republicii Moldova, 2019)
    Prezentul articol este consacrat problemelor ce țin de executarea documentației urbanistice prin prisma respectării indicilor urbanistici în procesul de realizare a investițiilor pe teritoriul municipiului Chișinău. Astfel, ...
  • Normalized representation of spin valve resistance value by the hyperbolic metric 
    PENIN, Alexandru; SIDORENCO, Anatoly (Institutul de Inginerie Electronică şi Nanotehnologii "D. Ghiţu" al AŞM, 2020)
    Magnetoresistive sensors for measuring the magnetic field strength in a wide range up to saturation are considered. Normalized or relative expressions are introduced to change the resistance of the sensor to evaluate the ...
  • Artizani din localitățile din nordul Republicii Moldova – promotori ai covorului tradițional moldovenesc 
    TOCARCIUC, Alina (CEP USM, 2020)
    Alesul covoarelor a fost un meșteșug tradițional atestat în mai multe localități din raioanele Orhei, Strășeni, Călărași, precum și în cadrul mănăstirilor de călugărițe Tabăra, Hâncu, Hirova, Hagimus. În comunicare, în ...
  • Activitatea atelierelor de confecționare a costumului național moldovenesc în primele decenii postbelice 
    BUJOREAN, Tatiana (CEP USM, 2020)
    O trecere în revistă a principalelor aspecte care circumscriu activitatea atelierelor de producție artistică din RSSM (denumite arteluri până în anul 1960) reprezintă un subiect important pentru domeniul etnologiei și ...
  • Educația între prezent și viitor 
    LUNGU, Viorelia (Universitatea de Stat din Tiraspol, 2019)
    Educația are un rol important în o societate în continuă schimbare. În acest context este necesar de a stabili atât realizările cât și competențele necesare pentru a determina performanța, o viziune prospectivă, promovând ...
  • Calcularea limitelor 
    BOTNARU, Dumitru; ŢURCANU, Alina (Universitatea de Stat din Tiraspol, 2018)
    În lucrare sunt studiate o serie de exemple de calculare a limitelor, fiind folosite anumite procedee. A series of examples of limit calculation are studied in the paper, using some methods.
  • Pd-Functionalized ZnO:Eu Columnar Films for Room-Temperature Hydrogen Gas Sensing: A Combined Experimental and Computational Approach 
    LUPAN, Cristian; KHALEDIALIDUSTI, Rasoul; MISHRA, Abhishek Kumar; POSTICA, Vasile; TERASA, Maik-Ivo; MAGARIU, Nicolae; PAUPORTÉ, Thierry; VIANA, Bruno; DREWES, Jonas; VAHL, Alexander; FAUPEL, Franz; ADELUNG, Rainer (American Chemical Society, 2020)
    Reducing the operating temperature to room temperature is a serious obstacle on long-life sensitivity with long-term stability performances of gas sensors based on semiconducting oxides, and this should be overcome by new ...
  • ZnO Micro/Nano Structures by MOCVD and Vapour Transport Technique: Growth and Characterization 
    RUSU, E.; BURLACU, A.; URSAKI, V.; STRATAN, G.; PURICA, M.; BUDIANU, E.; MONAICO, E. (IEEE, 2007)
    ZnO micro/nano structures were grown by metalo-organic chemical vapour deposition (MOCVD) and chemical vapour transport and condensation deposition process on Si and glass substrates. Using MOCVD method were grown uniform ...
  • Observation of surface phonon mode in porous GaP 
    KARAVANSKII, V. A.; ANASTASSAKIS, Evangelos; RAPTIS, Y. S.; SOKOLOV, V. N.; TIGINYANU, I. M.; URSAKI, V. V. (Society of Photo-Optical Instrumentation Engineers, SPIE, 1996)
    Simple preparation technique of nanoporous semiconductors by anodization has opened new ways to form and investigate quantum and surface effects in nanosized objects. It has also allowed technologists to extend the range ...
  • Raman and electrical characterization of n-InP implanted by 630-keV nitrogen 
    TIGINYANU, I. M.; MIAO, J.; HARTNAGEL, H. L.; RUCK, D.; TINSCHERT, K.; URSAKI, V. V.; ICHIZLI, V. M. (IEEE, 1996)
    The goal of this work was to study the peculiarities of lattice disorder and conductivity compensation caused by N-implantation in liquid encapsulated Czochralski grown n-InP single crystals. The ion-induced damage of the ...
  • Zn/sup +//P/sup +/ and Zn/sup +//As/sup +/ co-implantation in InP single crystals 
    URSAKI, V. V.; TIGINYANU, I. M.; ICHIZLI, V. M.; TERLETSKY, A. I.; PYSHNAYA, N. B.; RADAUTSAN, S. I. (IEEE, 1996)
    The activation efficiency of zinc impurity co-implanted with P/sup +/ and As/sup +/ ions in InP was studied by Hall-effect measurements. Both P/sup +/ and As/sup +/ co-implantations followed by post-implantation annealing ...
  • Zn/sup +/, Zn/sup +//P/sup +/ and Zn/sup +//As/sup +/ implanted InP: study of electrical and symmetry properties 
    TIGINYANU, I. M.; KRAVETSKY, I. V.; URSAKI, V. V.; MAROWSKY, G.; HARTNAGEL, H. L. (IEEE, 1997)
    InP is known to be characterized by a low activation efficiency of p-type dopants. Some attempts have been previously undertaken to use the coimplantation of P/sup +/ ions in order to improve the activation efficiency of ...
  • Photoluminescence and Raman scattering in In0.53Ga0.47As/InP:Dy 
    PODOR, Balint; VIGNAUD, D.; TIGINYANU, I. M.; CSONTOS, L.; URSAKI, V. V.; SHONTYA, V. P. (Society of Photo-Optical Instrumentation Engineers, SPIE, 1997)
    High purity In0.53Ga0.47As grown on InP by liquid phase epitaxy with small amounts of rare earth dysprosium (Dy) in the melt was investigated. The presence of Dy dramatically reduced the charge carrier and residual donor ...
  • Raman and Hall-effect characterization of Zn/sup +//P/sup +/ co-implanted GaAs subjected to rapid thermal annealing 
    URSAKI, V. V.; TERLETSKY, A. I.; TIGINYANU, I. M. (IEEE, 1998)
    It is shown that Zn/sup +//P/sup +/ co-implantation in combination with rapid thermal annealing (RTA) allows one to obtain p-type GaAs layers with the peak hole concentration as high as 2.10/sup 19/ cm/sup -3/ and narrow ...

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