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Synthesis of two-dimensional transition metal dichalcogenides and heterostructures by physical vapor deposition
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| dc.contributor.author | SAVA, F. | |
| dc.contributor.author | MIHAI, C. | |
| dc.contributor.author | SIMANDAN, I. D. | |
| dc.contributor.author | BECHERESCU, N. | |
| dc.contributor.author | VELEA, A. | |
| dc.date.accessioned | 2026-10-13T17:16:02Z | |
| dc.date.available | 2026-10-13T17:16:02Z | |
| dc.date.issued | 2026 | |
| dc.identifier.citation | SAVA, F.; C. MIHAI; I. D. SIMANDAN; N. BECHERESCU and A. VELEA. Synthesis of two-dimensional transition metal dichalcogenides and heterostructures by physical vapor deposition. In: 10th International Symposium on Dielectric Materials and Application, Abstract Book, ISyDMA’10, Chisinau, Republic of Moldova, 30 June -4 July, 2026. Technical University of Moldova. Chişinău: 2026, pp. 55-56. | en_US |
| dc.identifier.uri | https://repository.utm.md/handle/5014/37371 | |
| dc.description | This work was supported by a grant of the Ministry of Research, Innovation and Digitization, CCCDI-UEFISCDI, project number PN-IV-P7-7.1-PED-2024-2412 (contract no. 11PED/2025), within PNCDI IV. | en_US |
| dc.description.abstract | Two-dimensional (2D) transition metal dichalcogenides (TMDs) such as MoS2 and WS2 have attracted significant attention as semiconductor thin-film materials for optoelectronics, memristive devices, and energy applications. Their single- or few-layer forms exhibit direct bandgaps, strong light–matter coupling, and bandgap tunability through composition, layer number, and heterostructure engineering, properties inaccessible in their bulk counterparts. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Technical University of Moldova | en_US |
| dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
| dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
| dc.subject | heterostructures | en_US |
| dc.subject | microreactor | en_US |
| dc.subject | magnetron sputtering | en_US |
| dc.subject | sulfurization | en_US |
| dc.subject | memristors | en_US |
| dc.title | Synthesis of two-dimensional transition metal dichalcogenides and heterostructures by physical vapor deposition | en_US |
| dc.type | Article | en_US |
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10th International Symposium on Dielectric Materials and Applications (ISyDMA’10)
Chisinau, Republic of Moldova, June 30 - July 4, 2026
Except where otherwise noted, this item's license is described as Attribution-NonCommercial-NoDerivs 3.0 United States