Synthesis of two-dimensional transition metal dichalcogenides and heterostructures by physical vapor deposition

Abstract

Two-dimensional (2D) transition metal dichalcogenides (TMDs) such as MoS2 and WS2 have attracted significant attention as semiconductor thin-film materials for optoelectronics, memristive devices, and energy applications. Their single- or few-layer forms exhibit direct bandgaps, strong light–matter coupling, and bandgap tunability through composition, layer number, and heterostructure engineering, properties inaccessible in their bulk counterparts.