Articole din publicaţii internaţionale: Recent submissions

  • Semiconductor-oxide nanocomposites on the basis of porous semiconductors 
    SIRBU, Lilian; URSAKI, V. V.; TIGINYANU, I. M.; BOYD, R. W. (Institutul de Fizică Aplicată, AŞM, 2006)
    Over the last years, there has been considerable interest in optical properties of rare-earth-ion doped nanocrystals dispersed in a transparent medium as potential optoelectronic materials. This issue becomes especially ...
  • Intense luminescence from porous ZnSe layers 
    MONAICO, Eduard; UBRIETA, A.; FERNANDEZ, P.; PIQUERAS, J.; TIGINYANU, I. M.; URSAKI, V. V.; BOYD, Robert W. (Institutul de Fizică Aplicată, AŞM, 2006)
    The porous form of III-V semiconductors was extensively studied during the last decade. Porosity enhanced phenomena such as optical second harmonic generation and Terahertz emission have been reported. Porosity induced ...
  • Shubnikov–de Haas oscillations in Bi bicrystals with superconducting crystallite interfaces of twisting type 
    MUNTYANU, F. M.; GILEWSKI, A.; NENKOV, K.; ZALESKI, A.; CHISTOL, V. (Institutul de Fizică Aplicată, AŞM, 2006)
    It is an investigation of quantum oscillations ofρij (H) (Hall resistance and magnetoresistance) in Bi bicrystals with superconducting interface of twisting type, converted by magnetic field and/or a current in the normal ...
  • The oxide layers deposition on III – V semiconductor nanoporous materials 
    DIKUSAR, A.; SIMASHKEVICH, A.; SHERBAN, D.; MONAICO, E.; BRUK, L.; USATII, Yu.; TIGINYANU, I. (Institutul de Fizică Aplicată, AŞM, 2006)
    The peculiarities of the deposition process in dependence of the porous layer thickness were investigated. The porous layers of III-V semiconductor n-InP have been obtained by the anodic dissolution in 5% HCl. The diameter ...
  • Doping of SnO2 films during spray pyrolysis deposition: influence on gas sensing characteristics and thermal stability of film structure 
    KOROTCENKOV, G.; SCHWANK, J.; BORIS, I.; BLAJA, V. (Institutul de Fizică Aplicată, AŞM, 2006)
    The study of additives’ influence on both the gas sensing characteristics and thermal stability of SnO2 films structure was the main goal of a research. A conception of such approach is based on a statement that the ...
  • Oxygen chemisorbed states and its electronic levels on (111) In2O3 surface: photoemission and photoconductivity studies 
    BRINZARI, V.; IVANOV, M.; KOROTCENKOV, G.; KAMEI, M. (Institutul de Fizică Aplicată, AŞM, 2006)
    The fundamentals of gas response mechanism of metal oxide conductometric sensors and in particularly for the In2O3-based ones as far remain in dispute. The difficulties in description of operation mechanism and the problems ...
  • Temperature dependence of the optical gap CuGa5Se8 
    NATEPROV, A.; LEVCENCO, S.; SYRBU, N. N. (Institutul de Fizică Aplicată, AŞM, 2006)
    The investigation of the absorption coefficient spectra below the fundamental edge of ordered vacancy compound CuGa5Se8 was studied early for samples prepared by Bridgman method. Compositional measurements were carried out ...
  • X-ray induced luminescence in ZnIn2S4 and Zn3In2S6 
    MACHUGA, A.; RADU, R.; PINTEA, V.; ARAMA, E.; ZHITAR, V.; SHEMYAKOVA, T. (Institutul de Fizică Aplicată, AŞM, 2006)
    Compounds belonging to the system ZnxIn2S3 + x are of special interest due to their peculiar properties. Intensive luminescence and high photosensitivity in visible and ultraviolet range determine their potential applicability ...
  • Interference of resonance luminescence of exciton polaritons in CuGaS2 crystals 
    SYRBU, N. N.; STAMOV, I. G.; BEJAN, V. N.; TEZLEVAN, V. E.; NEMERENCO, L. L. (Institutul de Fizică Aplicată, AŞM, 2006)
    Excitons spectra in crystals CuGaS2 are investigated, in which the basic and excited states of excitons Γ4 and Г5 are found. The resonant luminescence ant its interference is found in the range excited states of excitons ...
  • Exceptional integration of metal or semimetal nanowires in human-hair-like glass fiber 
    BADINTER, E.; IOISHER, A.; MONAICO, E.; POSTOLACHE, V.; TIGINYANU, I. M. (ELSEVIER, 2010)
    We report on a technological route allowing one to integrate huge amounts of electrically isolated metal or semimetal (Pb/Sn alloys and Bi) nanowires in glass fibers with the diameter of up to a few hundreds of micrometers ...
  • Bound exciton in CuGaS2 
    SYRBU, N. N.; BEJAN, V. N.; TEZLEVAN, V. E.; NEMERENCO, L. L. (Institutul de Fizică Aplicată, AŞM, 2006)
    In CuGaS2 crystals absorption and luminescence spectra at the temperature 9 К at excitation by different wavelengths of Ar+ laser are investigated. In the luminescence and absorption spectra in crystals CuGaS2 at the ...
  • Diagrammatic approach for Impurity Anderson Model 
    MOSKALENKO, V. A.; DOHOTARU, L. A.; ENTEL, P.; DIGOR, D. F. (Institutul de Fizică Aplicată, AŞM, 2006)
    Impurity Anderson Model is the model for a system of conduction electrons that interact with a local spin as just another electrons in f – orbitals. The Hamiltonian of the system contains hybridization interaction between ...
  • Relation of AIIBIII2XVI4 Compounds to Other Materials, Their Properties and Applications (Instead of Introduction) 
    URSAKI, V. V.; TIGINYANU, I. M. (Springer-Verlag Berlin Heidelberg, 2014)
    This chapter provides a review of AIIB2IIIX4VI compounds as a class of materials in a wide family of ternary compounds. The origin and the place of these materials in the hierarchy of ternary compounds are presented. The ...
  • Topological insulator Bi2Te3 layers, transport and thermoelectric properties 
    NIKOLAEVA, A. A.; KONOPKO, L. A.; ROGACKI, K.; RUSU, A.; GRITSKO, R. (Institutul de Fizică Aplicată, 2016)
    We have investigated thermoelectric properties and Shubnikov de Haas (SdH) oscillations in topological insulator (TI) Bi2Te3 layers. TI are electronic materials that have a bulk band gap like an ordinary insulator but have ...
  • Influence the elastic deformation and low magnetic field on thermoelectric properties semiconductor Bi1-xSbx nanowires 
    BODIUL, P. P.; POPOV, I. A.; MOLOSHNIK, E. F.; ISTRATII, E.; POLTAVETS, A. (Institutul de Fizică Aplicată, 2016)
    We present the experimental results of the measurements the thermoelectric and magnetothermoelectric properties of semiconductor Bi1-xSbx nanowires, classified as topological insulators at elastic deformation. The individual ...
  • Superconducting features at Bi-Sb twisting crystallite interfaces 
    MUNTYANU, F. M.; GILEWSKI, A.; ZALESKI, A. J.; CHISTOL, V.; ROGACKI, K. (Institutul de Fizică Aplicată, 2016)
    We present the results of the study of quantum oscillations, magnetic and superconducting properties of the twisting bicrystals of 3D topological insulator Bi1-xSbx (0.07 < x < 0.15) at low temperatures and in magnetic ...
  • From photonic crystals to metamaterials: new challenges 
    TIGINYANU, I. M. (Institutul de Fizică Aplicată, AŞM, 2006)
    Photonic crystals represent periodic dielectric structures designed to control the flow of electromagnetic radiation. Photonic crystals can be viewed as a subclass of a larger family of material systems called metamaterials ...
  • Superconductivity and ferromagnetism in twisting Bi-Sb interfaces 
    MUNTYANU, F. M.; GILEWSKI, A.; ZALESKI, A. J.; CHISTOL, V.; ROGACKI, K. (Institutul de Fizică Aplicată, 2016)
    The hysteresis loops and temperature dependences of magnetic moment m(T) are studded in large disorientation angle (LDA) twisting interfaces of Bi1-xSbx (0 < x < 0. 2) alloys. They were found one superconducting transition ...
  • Chaos based communications with quantum dots lasers under the influence of multiple feedbacks 
    OLOINIC, T.; RUSU, S.S; TRONCIU, V.Z (Institutul de Fizică Aplicată, 2016)
    It is well known that semiconductor lasers have a great importance in our daily life. We can’t imagine a day without our computer or without sending and receiving messages. Semiconductor lasers have wide applications in ...
  • A method for measuring microwire parameters 
    DOROGAN, Valerian; ZAPOROJAN, Sergiu; MUNTEANU, Eugeniu; LARIN, Vladimir (Institutul de Fizică Aplicată, 2016)
    The most common techniques for measuring microwire geometrical parameters are provided by post manufactory measurements. These techniques are incompatible within automated production of microwire. A specialized meter is ...

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