Abstract:
Surface modification of ZnO network with Metal Organic Framework provides excellent optoelectronics properties. ZnO@ZIF-8 composite structure based photodetection is demonstrated. ZIF-8 layer over ZnO demonstrated excellent detectivity to low powered weak UV illumination. The UV detector exhibits exceptional responsivity and detectivity of 2043 mA/W, and 1.814*1013 Jones, respectively for low powered 4.1 μW weak signals at 2 V bias voltage. As significant optoelectronic properties with crucial figures of merit, photo responsivity to 370 nm UV illumination at low temperatures (25⸰C) demonstrates better performance over high temperatures (100⸰C). Subsequently, an extensive performance of ZnO@ZIF-8 composite structure shows extremely well recorded high detectivity for low powered optical signals at low operating temperature, also exhibited stable photodetection performance in adverse environment. The UV/visible ratio (370 nm/443 nm) is greater than 9 at 25⸰C can be ascribed as due to defect suppression contribution by ZIF-8 layer over ZnO. This work provides extremely stable, low powered photodetector with appreciable detectivity and can be extended to different thickness of ZIF-8 or other oxides based optoelectronic devices.
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