How semiconductor terminology has been enriched by research of electrochemical pore etching and electrodeposition

Abstract

Electrochemical pore etching, initially developed for silicon substrates, has progressively been extended to a wide range of semiconductor compounds, such as binary III–V and II–VI materials. This technique enables the formation of highly controlled porous architectures with tunable geometries, which are increasingly relevant for applications in photonics, sensing, energy conversion, and nanofabrication. While the historical development of pore etching technologies has been extensively reviewed in the literature, the present article highlights a specific regional contribution to this field: the sustained efforts of Moldovan researchers in advancing both the scientific understanding and technological applications of porous semiconductors. Special attention is given to the research conducted at the National Center for Materials Study and Testing of the Technical University of Moldova, which has significantly contributed to elucidating pore formation mechanisms in crystalline semiconductors and to the development of ordered porous structures with tailored properties. Research efforts in this area have resulted in the development of nanoporous networks exhibiting selective transport characteristics and complex interconnectivity, opening pathways to novel functionalities. Studies on metal deposition within these nanostructures have introduced new concepts such as hopping electrodeposition, allowing the formation of hybrid metal–semiconductor architectures. Additionally, the integration of anodic etching with self-organization phenomena has enabled the generation of highly ordered porous arrays with reproducible characteristics. These advances are not only relevant for fundamental studies but also open promising directions for the design of next-generation optoelectronic and catalytic devices. The review places these achievements in an international context and underlines their impact on the evolution of electrochemical nanostructuring.