Articole ştiinţifice: Recent submissions

  • Characterization of tellurium-based films for NO2 detection 
    TSIULYANU, D.; TSIULYANU, A.; LIESS, H.-D.; EISELE, I. (Elsevier, 2005)
    Sensing characteristics of tellurium-based thin films for NO2 monitoring was studied systematically. The influence of contact materials, thermal treatment, temperature and thickness of the samples on the electrical ...
  • Chalcogenide-based chemical sensors for atmospheric pollution control 
    MARIAN, S.; TSIULYANU, D.; MARIAN, T.; LIESS, H.-D. (De Gruyter, 2001)
    The authors report about characterization of chalcogenide-based thin films, as a materials for gas-sensing applications. The sensing behavior of the As–S–Te films was tested with environmental pollutant gases such as NO2, ...
  • Chalcogenide semiconductor based sensor for fast NO/sub 2/ detection 
    TSIULYANU, D.; MARIAN, S.; MIRON, V.; POTJE-KAMLOTH, K.; LIESS, H.-D. (IEEE, 2000)
    For the first time if is shown that thin films based on tellurium alloys exhibit high sensitivity to nitrogen dioxide at room temperature. The resistance of the films decreases reversibly in the presence of NO/sub 2/. ...
  • Chalcogenide glassy-based photoresists for microelectronics 
    TSIULYANU, D. I. (IEEE, 1995)
    Possibilities of application in microelectronics of chalcogenide glassy semiconductors (ChGS) as inorganic high-resolution photoresists is treated. A brief consideration of three main effects: photostructural transformations, ...
  • Chalcogenide based gas sensors 
    TSIULYANU, D.; MARIAN, S.; LIESS, H.-D.; EISELE, I. (National Institute of Optoelectronics, Romania, 2003)
    Evidence for direct application of the chalcogenide semiconductors for gas sensing is considered. Two kinds of sensitive thin film structures have been fabricated and studied, using both artificial dimorphite (As4S3) and ...
  • Arsenic trisulphide in isotype amorphous–crystalline heterojunctions 
    TSIULYANU, D. I.; ANDRIESH, A. M.; KOLOMEYKO, E. P. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 1978)
    Results are given of electrophysical properties of isotype amorphous As2S3-crystalline p-Si heterojunctions. It is shown that the forward currents are limited by the space charge in As2S3 and the reverse ones are limited ...
  • Анодный электродный процесс в халькогенидных стеклообразных полупроводниках, стимулированный внешними воздействиями 
    АНДРИЕШ, А. М.; НЕФЕДОВ, В. Я .; ЦИУЛЯНУ, Д. Я .; СОКОЛОВ, А. Н.; ТРИДУХ, Г. М.; ГРИНШПУН, Л. Б. (Ioffe Institute, RAS, 1990)
    В качестве объекта исследований использовались тонкослойные структуры Al—As 2S8Ge 4 , изготовленные термическим вакуумным напылением на стеклянные подложки с предварительно нанесенным проводящим слоем двуокиси олова. ...
  • Absorption edge and dispersion of the refractive index of arsenic-sulfur-germanium layers with an increased sulfur concentration 
    TSIULYANU, D. I.; GUMENYUK, N. A. (Springer Nature Switzerland, 1990)
    The interest in the optical properties of glassy materials of the As-S-Ge system and thin layers based on them has increased recently owing to the development of electro-optics and integrated optics. These materials form ...
  • Impedance Characterization of Gas Sensitive Chalcogenide Films 
    TSIULYANU, Dumitru; CIOBANU, Marina; MOCREAC, Olga (Springer Nature Switzerland, 2018)
    The gas sensing performance of chalcogenide thin films, investigated by the method of impedance spectroscopy is reported and discussed in order to assess their use in future gas sensors operating at room temperature.
  • A simple and high effective tellurium based sensor for NO/sub 2/ detection 
    TSIULYANU, D.; MARIAN, S.; LIESS, M.; LIESS, H.-D.; EISELE, I. (IEEE, 2004)
    A simple and stable NO/sub 2/ gas sensor device with rapid response/recovery time and low operating temperature has been developed using polycrystalline tellurium. The effect of thickness of the sample, thermal treatment ...
  • A programmable metallization cell based on Ag-As2S3 
    STRATAN, I.; TSIULYANU, D.; EISELE, I. (National Institute of Optoelectronics, Romania, 2006)
    The switching properties of a Programmable Metallization Cell (PMC) structure based on the Ag-As2S3 solid electrolyte were investigated. It was found that at 120 mV of forward bias voltage the device switches from an off ...
  • A new propylamine sensor using artificial dimorphite 
    TSIULYANU, D.; MARIAN, S.; GUBA, M.; POTJE-KAMLOTH, K.; LIESS, H.-D. (IEEE, 1998)
    The sandwich metal-dimorphite(As/sub 4/S/sub 3/)-metal structure is used as a sensor for detection of propylamine (P/sub r/NH/sub 2/) vapor. The gas induced shifts of the current-voltage characteristics as well as transient ...
  • WID: a new Schottky-structure design for THz-applications 
    COJOCARI, O.; SYDLO, C.; HARTNAGEL, H.-L. (IEEE, 2005)
    Whisker integrated diode (WID) is a fully vertical Schottky-based structure suitable for hybrid integration in THz-systems. This paper presents design, simulation and DC-measurement results of a WID for THz-mixing application.
  • THz Schottky diodes on epitaxial AlGaAs-membrane 
    COJOCARI, O.; OPREA, I.; SYDLO, C.; ZIMMERMANN, R.; WALBER, A.; HENNEBERGER, R.; HARTNAGEL, H.-L. (IEEE, 2005)
    Schottky structures based on quasi-vertical diode (QVD) design concept are essentially improved by optimization of the GaAs/AlGaAs wafer layout and fabrication process. Insertion of a 4 mum-thin epitaxial AlGaAs layer ...
  • THz Electronics 
    FEIGINOV, Michael; GONZALO, Ramón; MAESTROJUÁN, Itziar; COJOCARI, Oleg; HOEFLE, Matthias; LIMITI, Ernesto (John Wiley & Sons, Ltd, 2005)
    Summary Several key topics in THz electronics are discussed. We describe the operating principles, limitations, and state-of-the-art of resonant-tunnelling diodes (RTDs) and THz RTD oscillators. Furthermore, THz fundamental ...
  • THz Autocorrelators for ps Pulse Characterization Based on Schottky Diodes and Rectifying Field-Effect Transistors 
    PREU, Sascha; MITTENDORFF, Martin; WINNERL, Stephan; COJOCARI, Oleg; PENIRSCHKE, Andreas (IEEE, 2015)
    When operating Schottky diodes and rectifying field-effect transistors in the saturation regime, where they show a sublinear response to incident THz power, they can be used as fast autorcorrelators yielding information ...
  • The impact of process optimization on planar THz-Schottky device reliability 
    MOTTET, B.; SYDLO, C.; KOGEL, B.; ROBILLARD DE, Q.; COJOCARI, O.; HARTNAGEL, H. L. (IEEE, 2004)
    The technological complexity as well as space-application quality standards require sophisticated process control and optimization for reliability improvement of planar THz-Schottky devices. Degradation mechanisms are ...
  • Technology of Wide-Bandgap Diode Structures for Highfrequency Operation 
    MUTAMBA, K.; YILMAZOGLU, O.; COJOCARI, O.; SYDLO, C.; PAVLIDIS, D.; HARTNAGEL, H. L. (IEEE, 2006)
    This paper reports on technology development aspects for GaN-based diodes in view of their application at high frequencies. The investigated devices include structures for transferred electron effects for operation at high ...
  • SubMM-wave multipliers by film-diode technology 
    COJOCARI, Oleg; OPREA, Ion; GIBSON, Hugh; WALBER, Achim (IEEE, 2016)
    A series of THz-MIC-s were successfully fabricated by a so-called Film-Diode process. Sub-millimeter-wave multipliers based on these MIC-s were tested with excellent results. Peak measured output power of these multipliers ...
  • Schottky Diode Detectors for Monitoring Coherent THz Synchrotron Radiation Pulses 
    SEMENOV, A.; HÜBERS, H.-W.; POHL, A.; COJOCARI, O.; SOBORNYTSKYY, M.; HOEHL, A.; MÜLLER, R.; RIES, M.; WÜSTEFELD, G. (JACoW Publishing, Geneva, Switzerland, 2014)
    Coherent synchrotron radiation (CSR) in the terahertz frequency range is a powerful tool for the diagnostics of the electron-beam relying on the fact that the emission spectrum of THz CSR depends on the shape of the electron ...

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