Interface engineering and absorber quality control in tin sulfide-based hybrid photovoltaic devices

Abstract

The development of photovoltaic technologies based on earth-abundant and environmentally benign materials is essential for enabling sustainable and large-scale solar energy deployment. Chalcogenide absorbers such as tin monosulfide (SnS) have attracted significant attention due to their suitable band gap, high absorption coefficient, and compatibility with low-cost thin-film processing routes. Nevertheless, the performance of these emerging photovoltaic devices is often limited by challenges related to thin-film crystallization control, unfavorable morphology, interfacial recombination, and inefficient charge transport.