Self-organized porous semiconductor compounds

Abstract

This chapter provides a review of self-organization of pores in semiconductor compounds when subjected to electrochemical etching. The influence of key factors upon self-organization is elucidated under anodization of semiconductor compounds at high applied potentials or current densities implying growth of current line-oriented pores. A comparative analysis of the morphologies of pores in III-V and II-VI compounds is performed. It is shown that the direction of pore propagation can be efficiently controlled using photolithographic masks deposited prior the anodization. Besides, the formation of quasi-ordered nanotubular structures of titania via anodization of titanium foils is reviewed. The possibility for the deposition of self-organized size-saturated monolayer of metal nanodots using pulsed electroplating on porous semiconductor templates is highlighted. The prospects of application of described porous structures in light-driven micro-engines as well as in photocatalytic, photonic, electronic and ferromagnetic device structures are discussed.