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Browsing Articole din publicaţii internaţionale by Title

Browsing Articole din publicaţii internaţionale by Title

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  • VERLAN, V. I.; IOVU, M. S.; CULEAC, I.; NISTOR, YU. H.; TURTA, C. I.; ZUBAREVA, V. E. (National Institute of Optoelectronics, Romania, 2011)
    Thin films (1-10 µm thickness) of nanocomposites (NC) based on polymers and organic coordinated compounds (OCC) Eu(TTA)3H2O, Eu(TTA)3Phen, Eu(DBM)3Phen, Eu(TTA)2(Ph3PO)2NO3 (where TTA is thenoyltrifluoroacetonate (C8H5F3O2S), ...
  • VERLAN, V. I.; IOVU, M. S.; CULEAC, I. P.; TURTA, C. I.; ZUBAREVA, V. E. (American Scientific Publishers, 2012)
    Thin films (1–3 μm thickness) of nanocomposites (NCs) based on organic compounds with Eu3+ ions (Eu(TTA)3H2O, Eu(TTA)3 Phen, Eu(DBM)3 Phen and Eu(TTA)2(Ph3PO)2NO3 and polymer polyvinylpyrrolidone (PVP) or copolymer ...
  • GHIMPU, L.; TIGINYANU, I. M.; URSAKI, V.; LUPAN, O.; CHOW, L.; RUDZEVICH, Y.; LIN, Y. (Institute of Electrical and Electronics Engineerings, IEEE, 2012)
    This paper presents optical and sensory properties of ZnO nanofirous layers grown by a cost-effective and fast fabrication method based on magnetron sputtering. The as-prepared nanofibrous layers show good conductive ...
  • PURICA, M.; BUDIANU, E.; RUSU, E.; DANILA, M.; GAVRILA, R. (Elservier, 2002)
    Transparent and conductive ZnO thin films have been prepared by a method derived from chemical vapor deposition using Zn (C5H7O2)2 as Zn source. The deposited thin ZnO layers of ∼0.1 μm thickness on Si and InP semiconductor ...
  • GERU, I.; BORDIAN, O.; LOSHMANSKY, C.; CULEAC, I.; BARBA, A.; TURTA, C. (Institutul de Fizică Aplicată al AŞM, 2014)
    We present experimental results on preparation and characterization of colloidal CdSe QDs in organic solvent. Colloidal semiconductor QDs were prepared via a chemical route.
  • URSAKI, V. V.; TIGINYANU, I. M.; ZALAMAI, V. V.; HUBBARD, S. M.; PAVLIDIS, D. (American Institute of Physics, 2003)
    AlN/GaN/sapphire heterostructures with AlN gate film thickness of 3–35 nm are characterized using photoreflectivity (PR) and photoluminescence (PL) spectroscopy. Under a critical AlN film thickness, the luminescence from ...
  • URSAKI, V. V.; RUSU, E. V.; SARUA, A.; KUBALL, M.; STRATAN, G. I.; BURLACU, A.; TIGINYANU, I. M. (IOP Publishing, 2007)
    A new ZnO micro/nanostructure morphology in the form of micro-torches was grown in the family of ZnO hierarchical structures by a simplified thermal chemical vapour transport and condensation method using a vertical furnace. ...
  • STEELE, J. A.; RADHANPURA, K.; LEWIS, R. A.; SIRBU, L.; TIGINYANU, I. M. (IEEE, 2014)
    Bulk (111) and (100) InP wafers and nanoporous membranes have been studied using free space time-domain spectroscopy. The nonlinear optical response is shown to be dependent on heavy ion (Kr+15, Xe+23) dose, crystallographic ...
  • BORDIAN, Olga; VERLAN, Victor; CULEAC, Ion; IOVU, Mihail; ZUBAREVA, Vera; NISTOR, Iurie (SPIE, Society of Photo-Optical Instrumentation Engineers, 2015)
    We describe a new nanocomposite material based on the copolymer of styrene with butyl methacrylate (1:1) (SBMA), and coordinating compound of Europium(III) Eu(TTA)3(Ph3PO)2. The SBMA/Eu(TTA)3(Ph3PO)2 nanocomposite was ...
  • PERJU, Veacheslav L. (SPIE, 2001)
    The theory of designing the optical-electronic image processing computer systems has been presented. A model of parallel image processing system has been considered, that is based on the principle of function decomposition. ...
  • BUDIANU, Elena; PURICA, Munizer; MANEA, Elena; RUSU, Emil; GAVRILA, Raluca; DANILA, Mihai (Elservier, 2002)
    This paper presents an n-i-p type solar cell structure consisting of polycrystalline silicon thin film as an absorber of incident radiation and a ZnO thin film for optical improvement. The characteristics of Si layers ...
  • BERTOLOTTI, Mario; LIAKHOU, G. L.; VOTI, Roberto Li; MATERA, A.; SIBILIA, Concita; VALENTINO, M. (SPIE, 1997)
    The photodeflection method is able to characterize the propagation losses in optical waveguides. The theory of the transverse configurations in air and in situ is reviewed. The procedure to determine the propagation loss ...
  • SCHOENHERR, D.; COJOCARI, O.; SYDLO, C.; GOEBEL, T.; FEIGINOV, M.; HARTNAGEL, H. L.; MEISSNER, P. (IEEE, 2008)
    This paper presents the effect of optical mixing in zero-bias InGaAs Schottky detectors at THz frequencies. The excitation of ultrafast carriers by illumination with two 1.5 mum laser beams is verified. This proves the ...
  • RADAUTSAN, S. I.; SYRBU, N. N.; KIOSEV, V. K. (WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim, 1974)
    The relative photosensitivity spectra of Ni-CdP2 Schottky barriers have been investigated experimentally; in these spectra a structure consisting of nine maxima has been observed in the intrinsic absorption region. The ...
  • TSIULYANU, D.; CIOBANU, M.; STRATAN, I. (Institutul de Fizică Aplicată, AŞM, 2018)
    Quaternary solid electrolytes based on Ag photodoped glasses have been fabricated and studied. The process of fabrication consists of: the synthesize of glassy materials followed by their structural and electrical ...
  • SYRBU, N. N.; KRASOVSKY, V. T.; GRINCHESHEN, I. N. (WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim, 1993)
    The optical phonons at k = 0 of TlSbS2, TlSbSe2, and Tl3SbS3 have been investigated by infrared reflectivity measurements from 50 to 4000 cm−1 at 300 K. The factor group analysis of vibrational modes of TlSbS2 and Tl3SbS3 ...
  • STAMOV, I. G.; SYRBU, N. N.; ZALAMAI, V. V. (Elservier, 2014)
    The emission lines of bound and free excitons and their phonon replicas were observed in the luminescence spectra of ZnP2-D48 crystals doped with Mn, Sn, Cd and Sb measured at 10K. The emission lines are described by the ...
  • STAMOV, I. G.; ZALAMAI, V. V.; SYRBU, N. N.; TIRON, A. V. (Elsevier, 2020)
    Interference spectra of layered ZnIn2S4 crystals were investigated for samples of different thicknesses (7.5–900 μm). Spectral dependences of refractive indices (na and nb) for light waves with different polarizations were ...
  • SYRBU, N. N.; KRASOVSKY, V. T.; GITSU, D. V.; GRINCHESCHEN, I. N. (Elservier, 1995)
    Fundamental absorption edge spectra and reflectivity spectra of TlaAsS3, T13AsSe3 and TlaSbS 3 crystals have been investigated in the range 1-6 eV at 300 and 77 K. Polarization dependences of three excitonic series ground ...
  • SOBOLEV, V. V.; SYRBU, N. N. (WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim, 1974)
    Edge absorption, photoconductivity, and reflectivity spectra are investigated of Zn3P2 crystals in the range from 1 to 12.5 eV and reflectivity spectra of Cd3P2 crystals in the range from 1 to 12.5 eV. The Eg value of Zn3P2 ...

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