Proceedings of the 13th Edition of European Exhibition of Creativity and Innovation, Romania https://repository.utm.md/handle/5014/20310 2026-04-20T06:15:53Z 2026-04-20T06:15:53Z NIKOLAEVA, Albina KONOPKO, Leonid BODIUL, Pavel GHERGHISAN, Igor COROMISLICHENCO, Tatiana PARA, Gheorge https://repository.utm.md/handle/5014/26379 2024-02-13T13:43:05Z 2021-01-01T00:00:00Z

Technology to prepare the single-crystals layers for thermoelectric applications (microcoolers) NIKOLAEVA, Albina; KONOPKO, Leonid; BODIUL, Pavel; GHERGHISAN, Igor; COROMISLICHENCO, Tatiana; PARA, Gheorge The primary purpose of the given presentation was to develop new reliable and reproducible engineering techniques to prepare low-dimensional structures (single- crystals layers) of bismuth telluride and semiconductor bismuth–antimony topological insulator (TI) n-and p-type for thermoelectric applications (microcoolers). Patent no. MD 1366 Z 2020.03.31. Procedeu de obţinere a peliculelor monocristaline subţiri.

2021-01-01T00:00:00Z BELOTSERKOVSKII, Igor SIDORENKO, Anatolie CONDREA, Elena SMYSLOV, Vladimir https://repository.utm.md/handle/5014/26377 2024-02-13T13:42:09Z 2021-01-01T00:00:00Z

Deformation vacuum gauge BELOTSERKOVSKII, Igor; SIDORENKO, Anatolie; CONDREA, Elena; SMYSLOV, Vladimir To improve the accuracy of low pressure measurements, a VD-10 tensoresistive vacuum gauge sample has been developed and constructed; the gauge includes a measuring unit and a transducer, the sensitive element of which is a silicon crystal in the middle part of which a thin membrane with tensoresistors placed on the outer surface is formed. To decrease the dependence on the ambient temperature, a circuit consisting of a transistor and resistors is formed on the crystal; the circuit provides power to the bridge circuit with a temperature-dependent voltage to compensate for the drift. In addition, temperature fluctuations are recorded by the measuring unit for additional software correction. Patent no. F 2019 0041 2019.05.23 Date of publication: 2019.09.30.

2021-01-01T00:00:00Z KONOPKO, Leonid NIKOLAEVA, Albina KOBYLIANSKAYA, Ana PARA, Gheorge https://repository.utm.md/handle/5014/26374 2024-02-13T13:40:43Z 2021-01-01T00:00:00Z

Technology of oriented growth of anisotropic single-crystal Bi films in a strong electric field KONOPKO, Leonid; NIKOLAEVA, Albina; KOBYLIANSKAYA, Ana; PARA, Gheorge The invention relates to the field of materials science and nanotechnology, and more precisely to the possibilities of obtaining single-crystal Bi films with predetermined parameters. The objective of the invention is to develop a technology for recrystallization of thin Bi films with the final aim to obtain the necessary orientation of the main crystallographic axis C3 of the film. The proposed method is based on our patent on the recrystallization of a glass-coated bismuth microwire in a strong electric field (Patent No.MD 1409 Y 2019.12.31). The patent has been prepared for submission.

2021-01-01T00:00:00Z MORARI, V. URSACHI, V. RUSU, E. TIGHINEANU, I. https://repository.utm.md/handle/5014/26373 2024-02-13T13:25:40Z 2021-01-01T00:00:00Z

Ultraviolet (UV) photodetector MORARI, V.; URSACHI, V.; RUSU, E.; TIGHINEANU, I. The UV domain of the optical spectrum is divided into the following subdomains: UV-A subdomain 400-320 nm, UV- B 320-280 nm, UV-C 280-200 nm, which correspond to the bactericidal domains, which is of major importance in the detection and optical radiation dosimetry in antibacterial treatment. The result of the invention consists in ensuring the selectivity of the photoreceptor to ultraviolet radiation for the subdomains of the optical spectrum A, B, C depending on the composition of the MgxZn1-xO layer by creating a bandgap gradient of at least 3*105 eV/cm in the active region of the detector in the photoreceptor structure of the transparent-window film with a difference of the energy bands compared to the absorption film. Patent application : No.2139 / 2020. Class no. 5. Industrial and laboratory equipments.

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